Active metasurfaces utilizing phase change materials (PCMs) are currently under investigation for applications in free-space optical communication, optical signal processing, neuromorphic photonics, quantum photonics, and compact LiDAR. Attention has now turned towards novel PCM like Sb2S3 which exhibit lower optical absorption and reasonable values of refractive-index contrast in comparison to traditional data-storage PCM. We propose and numerically study the class of all-dielectric metagratings capped with low-loss PCM and predict the possibility of continuously tunable resonances whose quality factors degrade gracefully during the amorphous-to-crystalline phase transition of the PCM. Specifically, we consider the CMOS-compatible silicon-nitride on silica substrate material platform for simple and asymmetric metagratings (in particular, the symmetric-broken dimerization) and Sb2S3 capping. Our numerical study predicts that notch-filters operating around the 1550 nm NIR wavelength window can be achieved with tuning range of over 76 nm with Q-factors ranging from 784 (amorphous-phase) to 510 (crystalline-phase) (a degradation in Q of about 35%) and insertion loss of about 0.9 dB. These performance figures are a significant improvement over previously published designs utilizing data-storage PCMs and other traditional notch-filter mechanisms. We examine the influence of grating dimerization and geometrical parameters on performance metrics of the notch-filter and predicts the possibility to trade-off rejection-band and in-band spectral transmission properties. Lastly, we perform a study of all-optical phase change mechanism. Our study is promising for the miniaturization of tunable notch-filter based optical systems.