This study analyses the vertically stacked GAA Multi-Bridge-Channel FETs like Nanosheet at the device level for CMOS applications. Studies are carried out to validate the impact of geometric deviations concerning thickness and width of the FET's performance. The study also investigates the process parameter variation on DC metrics like threshold voltage (Vth), subthreshold swing (SS), ON-time (ION), OFF-time (IOFF), ION/IOFF, and DIBL. The device achieves better performance by optimizing Nanosheet width (NW) and thickness (NT) variability which ensures scaling flexibility. The CADENCE tool is used to investigate the device's performance in terms of circuit applications. Various circuits like CMOS inverter transient response, switching characteristics, voltage transfer characteristics (VTC) and noise margins are evaluated. The CMOS inverter energy delay product (EDP) and power delay product (PDP) are also analyzed. The PDP and EDP increase by 2.51x and 3.06x with rise of NW. The CMOS inverter noise margins (NMs) are calculated towards digital circuit applications. The proposed Nanosheet FET has good electrostatic integrity due to its GAA nature; thus, it is a strong contender for low-power applications for future technology nodes.

This paper proposes and investigates a label-free dielectrically modulated biosensor employing a Gate All Around Tree-Shaped Nanosheet Field Effect Transistor (GAA-TS-NSFET). Excellent sensitivity to the biomolecules which are charged and neutral are demonstrated by the electrical properties of the suggested biosensor when evaluated under various biomolecule influences. A thorough sensitivity assessment is used to assess the sensing capabilities of the biosensors with various channel configurations. As indicators of biosensor sensitivity variation, we examine the subthreshold swing (SS), threshold voltage (Vth), and current switching ratio (Ion/Ioff). According to the findings, an additional channel acts as an interbridge, allowing the tree-shaped biosensor to attain the best sensitivity compared to biosensors based on NSFETs. Additionally, the article investigates how various spacer materials impact sensitivity. We also run several scenarios to see how different fill percentages affect the proposed biosensor’s sensitivity. The amount of biomolecules present determines its sensitivity. Finally, the suggested biosensor's sensitivity is compared to other notable biosensing application efforts in a status map. The proposed GAA-TS-NSFET-based biosensor outperforms the previous works concerning Ion/Ioff sensitivity

Concrete production is energy-intensive and has an adverse impact on the environment due to the raw materials involved. Currently, India has abundant reserves of fly ash and ground granulated blast furnace slag (GGBS). Despite various applications, fly ash often ends up in landfills. Given its abundance, there is a growing interest in utilising substantial quantities of fly ash in concrete production. In the current study, M30-grade concrete is designed with very high levels of fly ash and GGBS. Additionally, quick lime (QL) is incorporated as a supplementary agent to augment lime content. A total of twenty concrete mixes have been developed with different combinations of fly ash, GGBS, and QL. Results illustrate that the addition of QL does not show overall strength improvement to the GGBS-based mixes, but it impacts on fly ash-based mixes. The targeted design strength is achieved with 70% cement replacement with fly ash and QL. The strength development depends on the pozzolanic reaction initiated and the formation of hydration products in the system. The environmental impact of concrete is assessed by analysing its life cycle assessment using a cradle-to-gate approach. The energy requirement and kg-CO 2 eq. emissions depend on the level of cement replacement. The fly ash-based concrete emits less kg-CO 2 eq. and requires less energy than the GGBS-based mixes. Overall, the designed strength is achieved with 65% fly ash, requiring 59% less energy, reducing 54% CO 2 footprint, 56% GWP 100, 80% HTP inf, 46% ODP inf, and cost by 34% compared to OPC-based concrete.

This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO2 and HfO2, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the ION, IOFF, ION/ IOFF, threshold voltage, DIBL, gain parameters (gm, gd, Av), gate capacitance, and cut-off frequency (fT). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10-18, according to the simulation results. A transconductance (gm) value of 21 ?S and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.

We discuss the probable replacement of FinFETs and gate-all-around (GAA) with nanosheet field effect transistor (NS-FET), which will continue to generate advantageous node to node scaling advantages. Improved electrostatics compared to FinFETs, gate-all-around and allowing for further gate length (L) shrinkage, high design flexibility (a variety of NS widths are allowed), and larger drivability (I) per layout footprint are all benefits of NS FETs, which increase the number of vertically stacked NS per device. The user is able to change the width of the sheet of the Nanosheet Field Effect Transistors in order to change the output currents (I). it has an identical structure like Nanowire FET except the width is wider compared to nanowire FET, and can manage leakage current more effectively, which enhances high-power transistor performance. The greatest II ratio, highest ON current (I), lowest OFF current (I), are all characteristics of the NS FET, which also has the higher subthreshold performance. With an I/I ratio of 10, a subthreshold slope (SS) of 62.5 mV/dec, and the threshold voltage of 0.37 V, the nanosheet FET attained the good electric properties. 3-D computer-aided design (TCAD) is used to simulate the nanosheet FET device. The analog and digital/RF performance of the device is also studied. The outcome shows the NSFET's enormous potential for forthcoming analog and digital circuit applications.

Wireless applications require a low power technology that enables DC/analog/RF functions on the same chip. It is well established fact that Multi-channel FinFET (Multifin) enhances the DC/analog/RF performance of the FET. The proposed design with spacer dielectric ensures reduced OFF current ( I OFF ), better subthreshold performance and improved ON current ( I ON ) towards high performance and low power applications. Along with single- k spacer a dual- k spacer combination of (Air + Si 3 N 4 ) called hybrid spacer (low- k towards gate and high- k near source/drain) is studied for the first time towards DC/analog/RF and linearity metrics of Multifin FET. The Air spacer shows extravagant performance towards RF domain and HfO 2 shows better for DC and analog perspective. With Air spacer dielectric the Multifin FET exhibits terahertz (THz) frequency ranges and ensures high frequency applications. The linearity and harmonic distortion metrics towards wireless communication applications with various spacer dielectric is also analysed. The hybrid spacer shows better linearity and harmonic distortion performance along with Air and shows a strong contender towards RF applications. Moreover, the reduced capacitances ensure hybrid spacer is potential towards driving circuit applications at advanced nodes.

Tree-shaped Nanosheet FETS (NSFET) is the most dependable way to scale down the gate lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET with the gate having a stack of high-k dielectric (HfO2) and SiO2 using different spacer materials, which can be done using TCAD simulations. The Tree-shaped NFET device with {mathrm {T}}_{mathrm {(NS)}} =5 nm, {mathrm {W}}_{mathrm {(NS)}} =25 nm, {mathrm {W}}_{mathrm {IB}} =5 nm, and {mathrm {H}}_{mathrm {IB}} =25 nm has high on-current (I_{ON} ) and low off-current (I_{OFF} ). The 3D device with single-k and dual-k spacers are compared and its DC characteristics are shown. It is noted that the dual-k device achieves the maximum I_{ON}/I_{OFF} ratio, which is 10^{9} , compared to 10^{7} because the fringing fields with spacer dielectric lengthen the effective gate length. Additionally, the impact of work function, interbridge height, width, gate lengths, and temperature, along with the device's analog/RF and DC metrics, is also investigated in this paper. Even at 12 nm LG, the proposed device exhibits good electrical properties with DIBL =23 mV/V and SS =62 mV/dec and switching ratio (I_{ON}/I_{OFF}) = 10^{9}. The device's performance confirms that Moore's law holds even for lower technology nodes, allowing for further scalability.

We report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlGaN GDC-HEMT)andtheAlN-GDC-HEMT.Twoquantumwellsareformedinboth devices, leading to distinct double peak features in transconductance and cut-off frequency plots, highlighting efficient inter-channel connection behavior. The study investigates the relative performance of AlN-GDC-HEMT and AlGaN GDC-HEMT, exploring the influence of gate recess length (LR) and top barrier thickness. Additionally, the scaling behavior of the HEMTs is examined with varying gate lengths (LG). Furthermore, the impact of gate engineering and lateral scaling on both devices’ DC/RFbehavioris explored. Extensive comparative analysis shows that the AlN-GDC-HEMT outperforms the conventional AlGaN-GDC-HEMT, mainly attributed to AlN’s higher polarization (spontaneous) density and its wider bandgap. The optimized AlN-GDC HEMT with LG = 40 nm, LGS = 250 nm, and LGD = 400nm exhibits superior performance resulting in transconductance (GM) values of 203.1 and 787.5 mS/mm at two peaks, an IDS_peak of 1.97 A/mm, IDS_sat of 3.18 A/mm, and the highest fT derived from the left and right peaks was 285.1 and 416.8 GHz, respectively. The promising results from this first investigation indicate the potential and applicability of AlN-GDC HEMTsin future RF power amplifiers.

An approximate carry select adder (CSLA) with reverse carry propagation (RCSLA) is showed in this work. This RCSLA was designed with reverse carry propagate full adder (RCPFA). In RCPFA structure, the carry signal propagates in the reverse direction that is from MSB part to LSB part, then the carry input has greater importance compared to the output carry. Three types of implementations were designed in RCPFA based on the design parameters. This method was applied to RCA & CSLA to design other types of approximate adders. These designs and simulations were done in CADENCE Software tool with 45 nm COMS technology. The design parameters of the three CSLA implementations with RCPFA are compared with the existing CSLA adders.

Medical diagnosis has been developed with new techniques which are capable of performing very sensitive detection and quantifying certain parameters. Microfluidic based sensors are taking very essential part in the diagnosis of several parameters. These parameters can be correlated with the presence of specific molecules and their quantities. A lab-on-chip biosensor is a miniaturized device integrated in a single chip which can perform one or several analyses including human diagnostics done in the laboratory. This work presents, design and model of a lab on chip biosensor with molecule parameters using COMSOL multi-physics. In this paper, designed a glucose sensor, which can be used to track the glucose levels in body which helps diabetic patients maintain their glucose levels. The aim of this work is to design of a glucose sensor which is highly sensitive. The sensor is designed with an electrode and reaction surface in a micro channel. The designed sensor harvests a decent sensitivity in terms of average current density and with a limit-of-detection value 0.01µM.

The physical modelling of the tunnel field effect transistor (TFET) is done in this study. The Silvaco TCAD tool is used to design and simulate the TFET structure. The FET device has attracted a lot of attention as the ideal tool in creating biosensors because of its appealing properties such as ultra-sensitivity, selectivity, low cost, and real-time detection capabilities in sensing point of view. These devices have a lot of potential as a platform for detecting biomolecules. Short channel effects, specificity, and nano-cavity filling have all been improved in FET-based biosensors. FET-based biosensors are appropriate for label-free applications. Random dopant variations and a thermal budget are seen during the construction of a JLFET. To overcome this problem, the charge-plasma-based concept was established in FETs in this study. Different metallurgical functions for electrodes were employed in this biosensor to behave as a p-type source and n-type drain. To alleviate the short channel effects, a dual material gate work function for the gate electrode was devised, as well as a double gate architecture. Biomolecules can be neutral or charge-based, and both types of biomolecules can be identified using a proof-of-concept FET-based biosensor. Changes in the drain current (Id) of the device were achieved by varying dielectric values and charges in the cavity region with variable cavity lengths.

Biomedical applications adapt Nano technology-based transistors as a key component in the biosensors for diagnosing life threatening diseases like Covid-19, Acute myocardial infarction (AMI), etc. The proposed work introduces a new biosensor, based on Graphene Field Effect Transistor (GFET), which is used in the diagnosis of Myoglobin (Mb) in human blood. Graphene-based biosensors are faster, more precise, stronger, and more trustworthy. A GFET is created in this study for the detection of myoglobin biomarker at various low concentrations. Because graphene is sensitive to a variety of biomarker materials, it can be employed as a gate material. When constructed Graphene FET is applied to myoglobin antigens, it has a significant response. The detection level for myoglobin is roughly 30 fg/ml, which is quite high. The electrical behavior of the GFET-based biosensor in detecting myoglobin marker is ideal for Lab-on-Chip platforms and Cardiac Point-of-Care Diagnosis.